Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays

ABSTRACT

The present invention is a photodiode detector array for use in computerized tomography (CT) and non-CT applications. Specifically, the present invention is a high-density photodiode arrays, with low dark current, low capacitance, high signal to noise ratio, high speed, and low crosstalk that can be fabricated on relatively large substrate wafers. More specifically the photodiode array of the present invention is fabricated such that the PN-junctions are located on both the front side and back side surfaces of the array, and wherein the front side PN-junction is in electrical communication with the back side PN-junction. Still more specifically, the present invention is a photodiode array having PN-junctions that are electrically connected from the front to back surfaces and which can be operated in a fully depleted mode at low reverse bias.

FIELD OF THE INVENTION

The present invention is directed towards thin wafer photodiodes havingimproved strength and handling characteristics. Specifically, thepresent invention is directed towards novel photodiodes and methods ofmaking novel photodiodes that can be feasibly fabricated using thinwafers while still maintaining the overall performance characteristicsof the photodiode array and individual diode units. Still morespecifically, the photodiode arrays of the present invention havePN-junctions that are electrically connected from the front to backsurfaces, and thus, can be operated in a fully depleted mode at lowreverse bias.

BACKGROUND OF THE INVENTION

Photodiodes are typified by the quantification of certaincharacteristics, such as electrical, optical, current (I), voltage (V),and noise. Electrical characteristics predominantly include shuntresistance, series resistance, junction capacitance, rise or fall timeand frequency response whereas optical characteristics includeresponsivity, quantum efficiency, non-uniformity, and non-linearity.Noise in photodiodes is generated by a plurality of sources including,but not limited to, thermal noise, quantum or photon or shot noise, andflicker noise.

In the semiconductor industry it is often desirable to increaselight-induced current of photodiodes in order to increase thesignal-to-noise ratio and thereby enhance photodiode sensitivity.Photodiode sensitivity is crucial in low light-level applications and istypically quantified by noise equivalent power (NEP) defined as theoptical power that produces a signal-to-noise ratio of unity at thedetector output. NEP is usually specified at a given wavelength and overa frequency bandwidth of 1 Hz and is therefore expressed in units ofW/Hz^(1/2).

Silicon photodiodes, essentially active solid-state semiconductordevices, are among the most popular photodetectors coalescing highperformance over a wide wavelength range with unmatcheduser-friendliness. For example, silicon photodiodes are sensitive tolight in the wide spectral range, approximately 200*10⁻⁹ m to 1200*10⁻⁹m, extending from deep ultraviolet all the way through visible to nearinfrared. Additionally, silicon photodiodes detect the presence orabsence of minute light intensities thereby facilitating extremelyprecise measurement of the same on appropriate calibration. Forinstance, appropriately calibrated silicon photodiodes detect andmeasure light intensities varying over a wide range, from very minutelight intensities of below 10⁻¹³ watts/cm² to high intensities above10⁻³ watts/cm².

Photodiode arrays or photodiodes are used in an assortment ofapplications including, but not limited to, radiation detection, opticalposition encoding, and low light-level imaging, such as nightphotography, nuclear medical imaging, photon medical imaging,multi-slice computer tomography (CT) imaging, and ballistic photondetection etc. Typically, photodiode arrays may be formed as one-ortwo-dimensional arrays of aligned photodiodes, or, for optical shaftencoders, a circular or semicircular arrangement of diodes.

Conventional computed tomography (CT) scanners and digital radiographysystems use large numbers of X-ray detectors, on the order of severalhundred to several thousand, in which each X-ray detector includes ascintillator to convert X-rays into light and a photocell to convert thelight into an electrical signal. In such systems, it is preferred thatthe detectors are high density and that the detectors have equal pitch,i.e. the center-to-center distance from detector to detector is equal.Thus, the detectors are located as close as possible to one another,resulting in a detection system which has a high detection efficiency sothat a patient is exposed to only the minimum amount of X-rays requiredto produce a satisfactory image. As the devices become smaller, however,it becomes more difficult to provide efficient interconnections betweendevices, thus negating the benefits of the smaller device size.

The prior art discloses attempts to design, fabricate, and implementhigh-density semiconductor arrays. For example, U.S. Pat. No. 5,501,990,assigned to Motorola, Inc. discloses, “a method of fabricating a highdensity light emitting diode array with semiconductor interconnectscomprising the steps of: providing a substrate of non-conductivematerial with a major surface, a conductive layer of material on themajor surface of the substrate, a first carrier confinement layer on theconductive layer, an active layer on the first carrier confinement layerand a second carrier confinement layer on the active layer; separatingportions of the second carrier confinement layer, the active layer andthe first carrier confinement layer into a plurality of light emittingdiodes positioned in rows and columns and separating the conductivelayer into a plurality of columns connecting a first contact of eachlight emitting diode in a column to a first contact of each other lightemitting diode in the column; forming column contacts connected to theconductive layer at an end of each column; and forming a second contacton the cap layer of each light emitting diode and connecting secondcontacts for each light emitting diode in a row to the second contactsof all other light emitting diodes in the row.”

U.S. Pat. No. 5,656,508, also assigned to Motorola, Inc. discloses, “amethod of fabricating a two-dimensional organic light emitting diodearray for high density information image manifestation apparatuscomprising: providing an electrically insulative substrate with a planarsurface; depositing a layer of electrically conductive material on theplanar surface of the substrate; patterning the layer of electricallyconductive material to form a plurality of laterally spaced, conductivestrips defining first electrodes; depositing a layer of dielectricmedium on a surface of the conductive strips and the planar surface ofthe substrate; depositing a layer of photoresist on the layer ofdielectric medium; patterning the photoresist using a cavity definingmask to expose portions of the dielectric medium; etching away theexposed portions of the dielectric medium to form a plurality oflaterally spaced cavities, each of the plurality of cavities beingpositioned on an associated one of the defined first electrodes andexposing therein the associated first electrode; striping off thephotoresist; depositing in each of the cavities an electroluminescentmedium in the successive order of a layer of hole transporting material,a layer of active organic emitter, a layer of electron transportingmaterial and a layer of a low work functional metal; depositing a layerof ambient stable metal on the dielectric medium so as to sealinglyoverlie each of the cavities and electrically contact the layer of lowwork function metal in the cavities; and patterning the layer of ambientstable metal into metal strips in a direction orthogonal to theconductive strips so as to define second electrodes sealing each of theplurality of cavities.”

In addition to the high cost of manufacturing and low throughput,another typical problem with high-density integration of conventionalphotodiode arrays is the amount and extent of crosstalk that occursbetween adjacent detector structures, primarily as a result of minoritycarrier current between diodes. The problem of crosstalk between diodesbecomes even more acute as the size of the photodiode arrays, the sizeof individual detectors comprising the arrays, the spatial resolution,and the spacing of the photodiodes is reduced.

In certain applications, it is desirable to produce optical detectorshaving small lateral dimensions and spaced closely together. For examplein certain medical applications, it would beneficial to increase theoptical resolution of a detector array in order to permit for improvedimage scans, such as computer tomography scans. However, at conventionaldoping levels utilized for diode arrays of this type, the diffusionlength of minority carriers generated by photon interaction in thesemiconductor is in the range of at least many tens of microns, and suchminority carriers have the potential to affect signals at diodes awayfrom the region at which the minority carriers were generated.Therefore, the spatial resolution obtainable may be limited by diffusionof the carriers within the semiconductor itself, even if othercomponents of the optical system are optimized and scattered light isreduced.

It is difficult, however, to generate thin wafer photodiodes in whichleakage current and noise is controlled and the wafer is sufficientlysturdy to handle processing and use is difficult. Popular applicationsincluding, but not limited to, computer tomography (CT), utilize thinwafer photodiode arrays produced on large diameter wafers. Theproduction of such arrays is often plagued by excessive loss due tobreakage of the delicate thin wafers.

In addition, as photodiode detector devices become smaller, it becomesmore difficult to provide efficient interconnections between devices,thus putting an additional demand on device electrical requirements. Theprior art has attempted to manage interconnect density by forming densemetal interconnect patterns, because high-density VLSI and ULSI devicestypically require multiple levels of surface metallization in order toaccommodate their complex wiring patterns. Multiple level metallizationcreates planarity problems in the metallization layers, however, therebylimiting interconnection density. Complex process steps are also neededto provide multiple levels of metallization.

For example, U.S. Pat. No. 5,276,955, assigned to Supercomputer SystemsLimited Partnership discloses “a method for forming a multilayersubstrate having high density area array interconnects, the methodcomprising the steps of: (a) providing three or more pre-assembledsubsections, each subsection comprising: a planar substrate having apair of generally planar exposed surfaces and being comprised of adielectric medium having a plurality of conductive layers disposedtherein, the conductive layers including: at least one power layer; andat least one X-Y signal pair layer; and a pad layer on at least one ofthe surfaces of the planar substrate, the pad layer comprising aplurality of metallic interconnect pads disposed on the surface of theplanar substrate such that an exposed surface of the interconnect padsis raised above the exposed surface of the dielectric medium surroundingthe interconnect pads, each of the interconnect pads being selectivelyconnected to one or more conductive regions in the signal pair layer orthe power layer; (b) stacking the three or more pre-assembledsubsections together such that the interconnect pads on the pad layer ofone subsection align with the interconnect pads on the pad layer of anadjacent subsection; and (c) electrically and mechanically joining thethree or more pre-assembled subsections in a simultaneous manner toconcurrently form the multilayer substrate by metallurgically bondingthe interconnect pads on adjacent subsections without bonding thesurrounding dielectric medium.”

The prior art, however, fails to provide a thin wafer photodiodestructure and method of manufacturing that produces sufficiently sturdywafers while still maintaining the overall performance characteristicsof photodiode arrays and their individual diode units, within detectionsystems.

More specifically, in CT applications, the power supply for advancedASIC circuits is typically 5 volts; therefore, the maximum reverse biasavailable for the photodiode is also 5 volts. Using conventionaltechnology, a photodiode array fabricated on bulk silicon materialcannot be fully depleted at 5 volts. While it is easy to fully deplete adevice at high bias, it is almost impossible to fully deplete a bulksilicon device at very low bias.

Consequently, there is still a need for economically, technically, andoperationally feasible methods, apparatuses, and systems formanufacturing thin wafer photodiode arrays. More exclusively, there isdemand for cost-effective computer tomography (CT) scanner photodiodearray while still maintaining the overall performance characteristics ofthe photodiode array and individual diode units.

In particular, what is needed is a specially structured photodiode arraythat can be operated in a fully depleted mode at low reverse bias. Morespecifically, what is needed is a photodiode array having PN-junctionsthat are electrically connected from the front to back surfaces suchthat is can be operated in a fully depleted mode at low reverse bias.

SUMMARY OF THE INVENTION

The present invention describes several embodiments of a novelphotodiode array and methods making the novel photodiode arrays that canbe feasibly fabricated using thin wafers while still maintaining theoverall performance characteristics of the photodiode array andindividual diode units. More specifically, the photodiode arrays of thepresent invention have PN-junctions that are electrically connected fromthe front to back surfaces, and thus, can be operated in a fullydepleted mode at low reverse bias.

In one embodiment, the present invention is a photodiode comprising asubstrate with at least a front side and a back side; at least onePN-junction on the front side; at least one PN-junction on the backside; at least one conduit for forming an electrical connection from aPN-junction on the front side of the substrate to a PN-junction on theback side of the substrate.

In one embodiment, the photodiode conduit further comprises aninsulation layer formed from silicon dioxide. In addition, thephotodiode conduit comprises a conductive layer deposited on theinsulation layer, where the conductive layer is formed from dopedpolysilicon and thus, enables enables electrical communication betweenthe front side and back side. In another embodiment, the conduitcomprises a p+ dopant layer and a polysilicon or polyimide filling.

In one embodiment, the present invention is a method of manufacturing asemiconductor device comprising the steps of performing a mask oxidationon a front side and a back side of a device wafer; implementing n+photolithography on the front and back sides; performing n+ diffusionfollowed by drive-in oxidation on the front and back sides; forming aconduit from the back side to the front side, wherein said conduit isfor enabling an electrical connection; growing an oxide layer on saidfront side, said back side, and conduit; implementing a first p+ areaphotolithography on the front side and the back side; growing apassivation layer on the front side and back side; implementing a p+mask lithography on the front side for etching contact windows on thefront side; performing p+ ion implantation on the front side and backside to form a PN-junction; depositing a polysilicon layer to fill theconduit and subsequently etching the polysilicon from at least portionsof the front and back side; implementing contact window lithography onthe back side; and performing metal deposition followed by etching themetal on the back side.

In one embodiment, the starting material device wafer has a diameter of5 inches. In another embodiment, the semiconductor device wafer startingmaterial has a diameter of 6 inches. In one embodiment, the device waferstarting material has a thickness in the range of 0.210 mm to 0.260 mm.In one embodiment, the device wafer starting material has a resistivityof 8000 Ωcm.

In one embodiment, the step of forming a conduit from the back side tothe front side is achieved by reactive ion etching. In anotherembodiment, the step of forming a conduit from the back side to thefront side is achieved by laser hole drilling.

The aforementioned and other embodiments of the present invention shallbe described in greater depth in the drawings and detailed descriptionprovided below.

BRIEF DESCRIPTION OF THE DRAWINGS

These and other features and advantages of the present invention will beappreciated, as they become better understood by reference to thefollowing detailed description when considered in connection with theaccompanying drawings, wherein:

FIG. 1 is a cross-sectional view of a first embodiment of a photodiodearray with double-sided PN junctions formed in accordance with thepresent invention;

FIGS. 2 a-2 d represent front side views of a first embodiment of aphotodiode array with double-sided PN junctions formed in accordancewith the present invention;

FIGS. 3 a-3 c represent back side views of a first embodiment of aphotodiode array with double-sided PN junctions formed in accordancewith the present invention;

FIGS. 4 a-4 n depict side planar views of a first embodiment of themanufacturing steps for forming a photodiode array with double-sided PNjunctions formed in accordance with the present invention;

FIG. 5 is a cross-sectional view of a second embodiment of a photodiodearray with double-sided PN junctions formed in accordance with thepresent invention;

FIGS. 6 a-6 d represent front side views of a second embodiment of aphotodiode array with double-sided PN junctions formed in accordancewith the present invention;

FIGS. 7 a-7 d represent back side views of a second embodiment of aphotodiode array with double-sided PN junctions formed in accordancewith the present invention; and

FIGS. 8 a-8 n depict side planar views of a second embodiment of themanufacturing steps for forming a photodiode array with double-sided PNjunctions formed in accordance with the present invention.

DETAILED DESCRIPTION OF THE INVENTION

The present invention is directed towards detector structures, detectorarrays, and design and implementation of detector arrays for anassortment of applications including, but not limited to, computerizedtomography (CT) and non-CT applications. Specifically, the presentinvention is directed towards high-density photodiode arrays, with lowdark current, low capacitance, high signal to noise ratio, high speed,and low crosstalk that can be fabricated on relatively large substratewafers. More specifically the photodiode array of the present inventionis fabricated such that the PN-junctions are located on both the frontside and back side surfaces of the array, wherein the front sidePN-junction is in electrical communication with the back sidePN-junction. Still more specifically, the front side PN-junction is inelectrical communication with the back side PN-junction via a conduitthat is drilled into the substrate via an appropriate method, asdescribed in detail below. Thus, the present invention is also directedtowards photodiode arrays having PN-junctions that are electricallyconnected from the front to back surfaces and which can be operated in afully depleted mode at low reverse bias.

In addition, the present invention is directed towards severalembodiments of a front-side illuminated, back-side contact double-sidedPN-junction photodiodes, optionally organized in the form of an array,including a plurality of p+ and n+ diffused regions. Specifically, thepresent invention is directed towards several embodiments of aphotodiode array having PN-junctions on both the front side and backside surfaces, wherein the PN-junctions are in electrical communication.

The present invention is also directed towards the fabrication of thinwafer photodiodes using the physical support provided by n+ diffusedlayer and/or p+ diffused layer. Consequently, the present inventiondelivers high device performance characteristics, such as low crosstalk,low radiation damage, high speed, low leakage dark current and highspeed, using a thin active layer. More specifically, in CT applications,desired, but not required, characteristics include high densityphotodiode arrays with low dark current (on the order of 20 pA when theCT photodiode array device is operated in fully depleted mode), lowcapacitance (on the order of 5 pF at 5 volts operational voltage) andlow crosstalk (on the order of 0.1% at 5 volts).

Reference will now be made in detail to specific embodiments of theinvention. While the invention will be described in conjunction withspecific embodiments, it is not intended to limit the invention to oneembodiment.

FIG. 1 is a cross-sectional view of a first embodiment of a front-sideilluminated, back-side contact (FSL-BSC) double-sided PN-junctionphotodiode array formed in accordance with the present invention. In oneembodiment, photodiode array 100 is preferably formed from a devicewafer of suitable semiconductor material. For example, but, not limitedto such example, a silicon wafer is used as the starting material forthe photodiode array of the present invention. In one embodiment, thestarting material is a silicon wafer having the followingspecifications: a 6-inch diameter; a thickness ranging from 0.210-0.260mm; n-type conductivity; and a resistivity on the order of 8000 Ωcm. Inanother embodiment, the starting material is a silicon wafer having thefollowing specifications: a 5-inch diameter; a thickness ranging from0.210-0.260 mm; n-type conductivity; and a resistivity on the order of8000 Ωcm. The above specifications are merely for the purposes ofillustration, and are not limiting. Consequently these specificationsmay be modified to suit the design, fabrication and functionalrequirements suggested herein.

In one embodiment, photodiode array 100 is formed from a silicon waferhaving a 6-inch diameter; a thickness of approximately 0.230 mm; n-typeconductivity; and a resistivity on the order of 8000 Ωcm. As shown inFIG. 1, for illustration purposes, at least a portion of photodiodearray 100 is divided into two regions, front-side region 105 and backside region 110. It should be understood by those of ordinary skill inthe art that the above specifications are not limited to thoserecommended herein and can be easily changed to suit varying design,fabrication, and functional requirements suggested herein.

In one embodiment, the front side region 105 and back side region 110comprise a plurality of doped regions. Preferably, adjacent dopedregions are of different impurities of different conductivity types. Forexample, but not limited to such example, front side region 105 and backside region 110 may comprise doped regions 106 and 107, respectively,doped with a suitable impurity of a first conductivity type, such aseither p-type or n-type. In addition, front side region 105 and backside region 110 further comprise doped regions 108 and 109,respectively, doped with a suitable impurity of a second conductivitytype, opposite that of the first conductivity type, either p-type orn-type.

For example, but not limited to such example, if regions 106 and 107 aredoped with a suitable impurity of a first conductivity type wherein thefirst conductivity type is n-type, then regions 108 and 109 are dopedwith a suitable impurity of a second conductivity type, wherein thesecond conductivity type is p-type. The first embodiment will bedescribed with respect to this scenario, but it should be noted hereinthat the photodiode array of the present invention and method ofmanufacturing the same is not limited to the embodiment describedherein.

In one embodiment, the present invention comprises PN-junctions on bothfront side 105 and back side 110 the device wafer. While boron (B) andphosphorus (P) are the preferred p-type and n-type dopants employed tocreate the p+ and n+ regions, it should be understood to those ofordinary skill in the art that any suitable doping material may be used.Preferably, doped diffusion regions 106, 107 have a depth of 1 μm anddoped diffused regions 108 and 109 have a depth of 0.5 μm.

Referring back to FIG. 1, in one embodiment, back side n+ region 107 isin electrical communication with a metallic area, region, or pad to format least one back side cathode 111. In another embodiment, back side p+region 109 is in electrical communication, preferably at a plurality ofpoints, with a metallic area, region, or pad to form a back side anode112.

In addition, the PN-junctions on both the front side and back sidesurfaces 105, 110 are electrically connected from the front junction tothe back junction. More specifically, the electrical contacts arebrought from the front side to the back side by means of laser cuttingor reactive ion etching (RIE) a conduit 113 into the photodiode array100. In addition, insulation layer 114 is deposited on the innersidewalls of conduit 113.

By way of example, and by no means limiting, the insulation layer grownherein may utilize thin film materials, such as oxides, sulfides,fluorides, nitrides, and selenides, among others. In one embodiment ofthe present invention, the insulation layer comprises silicon dioxide.In one embodiment, the silicon dioxide layer is uniformly grown overboth the front-side and the back-side of the wafer and the walls of theholes by thermal oxidation.

Conductive layer 115 is deposited over insulation layer 114 and servesas the electrical conduit to enable electrical communication between thefront side p+ region 108 and back side anode 112.

In one embodiment, conductive layer 115 is doped poly-silicon. Dopedpoly-silicon can withstand high temperature processing, can be depositedusing chemical vapor deposition methods, forms an effective ohmiccontact, and resists corrosion. Insulating layer 114 and conductivelayer 115 are formed on the inner sidewalls of conduit 113, andseparates adjacent photodiodes. Thus, front surface p+ region 108 is inelectrical communication with back side p+ anode 112 via conductiveconduit 113 formed in the photodiode array.

FIGS. 2 a-2 d are representative front side views of a first embodimentof a photodiode array with double-sided PN-junctions formed inaccordance with the present invention. Referring now to FIGS. 2 a and 2b, diode elements 201 reside within photodiode array 200. In oneembodiment, photodiode array 200 comprises diode elements 201 arrangedin the form of an 8×8 matrix on silicon wafer 202. Although an array ofa limited number of diode elements 201 is illustrated in FIG. 2 a, itshould be understood that an array or matrix of diode elements fallingwithin the scope of the present invention may have any number of diodeelements. A person of ordinary skill would appreciate that the number ofphotodiodes incorporated in the silicon wafer is not limited to theaforesaid number and can be adjusted to suit varied operationalspecifications.

Referring to FIG. 2 a, region 203 demarcates a portion of silicon wafer202, presented in further detail in FIG. 2 b. The followingspecifications are provided to describe an exemplary embodiment of thepresent invention and are not intended to be limiting. Rather, it shouldbe understood by those of ordinary skill in the art that any number ofspecifications are possible to practice the present invention. Forexample, but, not limited to such example, FIG. 2 b illustrates that inone embodiment, pitch length 204 between two adjacent diode elements 201is 2.500 mm, along both the length and width of silicon wafer 202.Within photodiode array 200, active regions or areas 205 of diodeelements 201 serve to provide surfaces onto which light impinges. In oneembodiment, the size of the active area is 2.200 mm².

In one embodiment, photodiode array 200 also possesses the followingcharacteristics: the distance 206 between the center of active area 205and the edge of wafer 202 is 1.285 mm; the thickness 207 of the n+cathode at the edge of wafer 202 is 0.070 mm; and the gap 208 betweenthe n+ edges of any two adjacent diode elements 201 is 0.050 mm.

The interconnections between diode elements 201 are made through backsurface contacts (not shown). In one embodiment, wire interconnectionsare made at the back of photodiode array 200 and are made available forcreating electrical connections with external circuits, such as printedcircuit boards (PCBs) and other devices.

FIG. 2 c is an expanded view of region 209 of photodiode array 200, andis further demarcated with a dotted circle. As shown in FIG. 2 c, in oneembodiment, photodiode array 200 also possesses the followingcharacteristics: the gap 211 between a p+ region and an n+ region ofwithin diode element 201 is 0.125 mm and the diameter 210 of the conduitthat allows for electrical communication between the front and backsurfaces of a diode element is 0.020 mm. FIG. 2 d is an expanded view ofDetail A shown in FIG. 2 c and is an illustration of the conduit linedwith a doped-polysilicon layer, as described earlier.

FIGS. 3 a-3 c are representative back side views of a first embodimentof a photodiode array with double-sided PN-junctions formed inaccordance with the present invention. Referring now to FIG. 3 a, diodeelements 301 reside within photodiode array 300. Exemplary dimensionalcharacteristics of photodiode array 300 have already been described withrespect to FIGS. 2 a-2 d above and will not be repeated herein.

Referring now to FIG. 3 b, which is an expanded view of area 303 on FIG.3 a, p+ anode 304 has a square dimension of 0.500 mm², in oneembodiment. In addition, in one embodiment, n+ cathode metal contacts orregions converge from a plurality of diode elements 301 to form acircular area 305 having a diameter of 0.250 mm. In addition, the n+cathode metal region 309 has a thickness of 0.0500 mm.

FIG. 3 c is a magnified view of region 306 of FIG. 3 b and is furtherdemarcated by a dotted circle. In one embodiment, the gap 307 betweenthe conduit for electrically connecting front and back regions and theinner edge of the n+ cathode metallic region is 0.060 mm.

The manufacturing process of the first embodiment of the FSL-BSCdouble-sided PN-junction photodiode of the present invention will now bedescribed in greater detail. It should be noted herein that although oneexemplary manufacturing process is described herein, variousmodifications may be made without departing from the scope and spirit ofthe invention.

FIGS. 4 a-4 n depict side planar views of a first embodiment of themanufacturing steps for forming a photodiode array with double-sided PNjunctions formed in accordance with the present invention.

Referring now to FIG. 4 a, the starting material for the photodiodearray of the present invention is device wafer 401. In one embodiment,device wafer 401 is a silicon wafer having the following specifications:a 6-inch diameter; a thickness ranging from 0.210-0.260 mm; n-typeconductivity; and a resistivity on the order of 8000 Ωcm. In anotherembodiment, device wafer 401 is a silicon wafer having the followingspecifications: a 5-inch diameter; a thickness ranging from 0.210-0.260mm; n-type conductivity; and a resistivity on the order of 8000 Ωcm. Theabove specifications are for the purposes of illustration, and are notlimiting. Consequently these specifications may be modified to suit thedesign, fabrication and functional requirements suggested herein.

Although the present invention is not limited to this embodiment, themanufacturing steps of the present invention will be described withrespect to device wafer 401 possessing the following specifications:n-type silicon wafer having a thickness of 0.230 mm. While it ispreferred that the device wafer be comprised of silicon, one of ordinaryskill in the art would appreciate that any suitable semiconductormaterial, which can be processed in accordance with the processing stepsof the present invention, may be used.

In one embodiment, device wafer 401 is polished on both sides to allowfor greater conformity to parameters, surface flatness, andspecification thickness. In another embodiment, device wafer 401 has ahigh reflectivity layer on both sides. It should be understood by thoseof ordinary skill in the art, however, that the above specifications arenot binding and that the type of material and wafer size can easily bechanged to suit the design, fabrication, and functional requirements ofthe present invention.

Referring back to FIG. 4 a, in step 420, raw device wafer 401 issubjected to a standard mask oxidation process that grows a mask oxidelayer 402 on both the front side 401 a and back side 401 b of the devicewafer. In one embodiment, the oxidation mask is made of SiO₂ or Si₃N₄and thermal oxidation is employed to achieve mask oxidation. Standardmask oxidation is well known to those of ordinary skill in the art andwill not be described in further detail herein.

As shown in FIG. 4 b, after the standard mask oxidation is complete, thedevice wafer is subjected to n+ photolithography on both the front andback sides 401 a, 401 b of device wafer 401 in step 425.Photolithography includes employing a photoresist layer to etch aspecific pattern on the surface of the wafer. Generally, the photoresistlayer is a photosensitive polymeric material for photolithography andphotoengraving that can form a patterned coating on a surface. Afterselecting a suitable material and creating a suitable photoresistpattern, a thin photoresist layer is applied to both front and backsides 401 a, 401 b of device wafer 401. In one embodiment, thephotoresist layer is applied via a spin coating technique. Spin coatingis well known to those of ordinary skill in the art and will not bedescribed in detail herein.

The device wafer is then subjected to n+ masking. N+ masking is employedto protect portions of device wafer 401. Generally, photographic masksare high precision plates containing microscopic images of preferredpattern or electronic circuits. They are typically fabricated from flatpieces of quartz or glass with a layer of chrome on one side. The maskgeometry is etched in the chrome layer. In one embodiment, the n+ maskcomprises a plurality of diffusion windows with appropriate geometricaland dimensional specifications. The photoresist coated device wafer 401is aligned with the n+ mask. An intense light, such as ultravioletlight, is projected through the mask, exposing the photoresist layer inthe pattern of the n+ mask. The n+ mask allows selective irradiation ofthe photoresist on the device wafer. Regions that are exposed toradiation are hardened while those that are reserved for diffusionremain shielded by the n+ mask and easily removed. The exposed andremaining photoresist is then subjected to a suitable chemical or plasmaetching process to reveal the pattern transfer from the mask to thephotoresist layer. An etching process is then employed to remove thesilicon dioxide layer. In one embodiment, the pattern of the photoresistlayer and/or n+ mask defines a plurality of regions 403 devoid of theoxide layer deposited in step 420 and ready for n+ diffusion.

Now referring to FIG. 4 c, in step 430, device wafer 401 is subjected ton+ diffusion followed by drive-in oxidation after the n+ masking andetching step. Generally, diffusion facilitates propagation of adiffusing material through a host material. In a semiconductor waferfabrication process, diffusion is employed to convert exposed portionsof an n-type silicon wafer into a p-type silicon wafer, or vice versa.In step 430, an appropriate amount of dopant atoms is deposited onto thesubstrate wafer and fills the gaps left by the removed photoresistlayer. Then, the wafer is subjected to a drive-in oxidation process thatis used to redistribute the dopant atoms and deposit them deeper intothe wafer. In addition, exposed silicon surfaces are oxidized.

FIGS. 4 d-4 f describe steps for forming a conduit that extends throughthe total thickness of the wafer. As shown in FIG. 4 d, in step 435 theback side 401 b of device wafer 401 is subjected to etch-holelithography to remove a portion of the oxide layer to create startopening 404 through oxide layer 402 of back side 401 b of device wafer401. As shown in FIG. 4 e, in step 440, hole 405 is then cut through theentire device wafer 401 using a suitable hole cutting or drillingmethod. As known to persons of ordinary skill in the art, methods usedto form holes in substrates comprise, but are not limited to, reactiveion etching (RIE), photo patterning, and laser-based techniques, such aslaser ablation, laser micromachining, and laser scribing. In oneembodiment, hole 405 is cut through the wafer using reactive ion etching(RIE). In step 445, as shown in FIG. 4 f, the hole forming process iscompleted by etching the oxide layer 402 on both the front side and backside of wafer 401, resulting in through-hole or conduit 405, formed frominner side walls 406 of device wafer 401.

Referring now to FIG. 4 g, in step 450, an oxide layer 407 is grown ontothe front side 401 a, back side 401 b and inner side walls 406 of devicewafer 401.

As shown in FIG. 4 h, in step 455, both front side 401 a and back side401 b of device wafer 401 are subjected to a p+ lithography process,forming regions devoid of oxide layer 408 a and 408 b. As with anyconventional lithography process, p+ lithography comprises at least thefollowing tasks, but not limited to such tasks: substrate preparation;photoresist application; soft baking; mask alignment; exposure;development; hard backing; and etching. In addition, various otherchemical treatments may be performed.

In step 460, shown in FIG. 4 i, anti-reflective layer 409 a and 409 bare grown, via thermal oxidation, on both front side 401 a and back side401 b of device wafer 401, respectively, covering regions 408 a and 408b. Various anti-reflective coating designs, such as 1 layer, 2 layer, 3layer, and 4+ layer may be employed. By way of example, and by no meanslimiting, the 1-layer anti-reflective coating design adopted hereinutilizes thin film materials, such as oxides, sulfides, fluorides,nitrides, selenides, metals, among others. In one embodiment of thepresent invention, the anti-reflective layer comprises silicon dioxideantireflective (SiO₂ AR).

A contact etch mask is then employed to etch a contact window 410 intoantireflective layer 409 a on front side 401 a of device wafer 401. Thecontact window is formed on the front side of the treated substratewafer by using standard semiconductor technology photolithographytechniques. The contact window oxide can then be removed by eitherstandard wet or standard dry etching techniques as are well known tothose of ordinary skill in the art.

More specifically, and not limited to such example, in one embodiment ofthe photodiode array of the present invention, a contact window mask isfirst applied, followed by etching with a contact window oxide. Contactlithography, well known to those of ordinary skill in the art, involvesprinting an image or pattern via illumination of a photomask in directcontact with a substrate coated with an imaging photoresist layer.Typically, a contact window is an aperture defined in a surfacepassivation layer through which device metallization develops contactwith circuit elements. In one embodiment, the contact window mask is adark field mask, which is used to remove the silicon oxide layer inregions requiring contacts. While contact masks have conventionally beenfairly large (on the order of 100 mm or higher), it is possible thatalignment tolerances may necessitate smaller mask sizes to allowstepping between exposures. As in nano-imprint lithography, the maskneeds to have roughly the same feature size as the desired image.

Using the contact mask, at least one contact window 410 is formedthrough the antireflective oxide layer 409 a on front side 401 a ofdevice wafer 401. In one embodiment, contact window etching is achievedvia a chemical etching process, wherein the wafer is immersed inbuffered oxide etch (BOE), a HF acid-based solution for intervalssufficient to remove the layers exposed by the contact window mask.

As shown in FIG. 4 j, regions 408 a and 408 b are subjected to p+masking and ion implantation through the AR layer in step 465, thusforming PN-junctions. The p+ masking process is standard insemiconductor technology and will not be described in detail herein. Thep+ masking process of step 465 further comprises ion implantation andthermal annealing, resulting in the formation of PN-junctions. In oneembodiment, the p+ dopant is boron. Once the p+ dopant is implanted andannealed, the PN-junction formation is complete.

In step 470, shown in FIG. 4 k, the oxide coated front side 401 a andback side 401 b and sidewalls 406 of hole 405 are subjected to apoly-silicon layer deposition followed by doping the poly-silicon layerwith a material of selected conductivity type, such as n-type or p-type.In one embodiment, the layer of poly-silicon is doped with boron.

As shown in FIG. 4 l, in step 475, front side 401 a and back side 401 bof device wafer 401 are subjected to a standard poly-siliconphotolithography process as is well known to those of ordinary skill inthe art, which results in the removal of the polysilicon layer fromportions of device wafer 401.

In step 480, shown in FIG. 4 m, contact window lithography is performedto etch contact windows 411 on the back side 401 b of device wafer 401to form a metal connection to the n+ and p+ diffused areas on thebackside.

Referring now to FIG. 4 n, in step 485, device wafer 401 is subjected toa metal deposition process to etch metal on the back side 401 b of thewafer for creating electrical connections to n+ and p+ diffused areas.In the metal deposition process, also called metallization, metal layers412 are deposited on the wafer to create conductive pathways. The mostcommon metals include aluminium, nickel, chromium, gold, germanium,copper, silver, titanium, tungsten, platinum, and tantalum. Selectedmetal alloys may also be used. Metallization is often accomplished witha vacuum deposition technique. The most common deposition processinclude filament evaporation, electron-beam evaporation, flashevaporation, induction evaporation, and sputtering, followed by metalmasking and etching. Metal etching can be performed in a variety ofmethods, including, but not limited to abrasive etching, dry etching,electroetching, laser etching, photo etching, reactive ion etching(RIE), sputter etching, and vapor phase etching.

FIG. 5 is a cross-sectional view of a second embodiment of a front-sideilluminated, back-side contact (FSL-BSC) double-sided PN-junctionphotodiode array formed in accordance with the present invention. In thesecond embodiment, a front to back electrical connection is establishedby etching a conduit or hole through the device wafer and doping thewalls of the resulting hole with a p+ dopant. The holes can optionallybe filled with polysilicon or polyimide to strengthen the photodiodearray. In one embodiment, photodiode array 500 is preferably formed froma wafer of suitable semiconductor material. Suitable semiconductorstarting materials have been described with respect to the firstembodiment above and will not be repeated herein.

In one embodiment, photodiode array 500 is formed from a silicon waferhaving a 6-inch diameter; a thickness of 0.230 mm; n-type conductivity;and a resistivity on the order of 8000 Ωcm. As shown in FIG. 5, forillustration purposes, at least a portion of photodiode array 500 isdivided into two regions, front-side region 505 and back side region510. It should be understood by those of ordinary skill in the art thatany number of regions having variable respective thicknesses may beselected as suitable for the FSL-BSC double-sided PN-junction photodiodeof the present invention. Thus, the above specifications are not limitedto those recommended herein and can be easily changed to suit varyingdesign, fabrication, and functional requirements suggested herein.

In one embodiment, the front side region 505 and back side region 510comprise a plurality of doped regions. Preferably, adjacent dopedregions are of different impurities of different conductivity types. Forexample, but not limited to such example, front side region 505 and backside region 510 may comprise heavily doped regions 506, 507, 508, and509 doped with a suitable impurity of a first conductivity type, such aseither p-type or n-type. In addition, front side region 505 and backside region 510 further comprise diffused regions 511 a, 511 b, 511 c,511 d, 511 e, and 511 f, doped with a suitable impurity of a secondconductivity type, opposite that of the first conductivity type, eitherp-type or n-type.

For example, but not limited to such example, if regions 506, 507, 508,and 509 are doped with a suitable impurity of a first conductivity typewherein the first conductivity type is n-type, then regions 511 a, 511b, 511 c, 511 d, 511 e, and 511 f are doped with a suitable impurity ofa second conductivity type, wherein the second conductivity type isp-type. The second embodiment will be described with respect to thisscenario, but it should be noted herein that the photodiode array of thepresent invention and method of manufacturing the same is not limited tothe embodiment described herein.

In one embodiment, the present invention comprises PN-junctions on bothfront and back sides of the wafer. While boron (B) and phosphorus (P)are the preferred p-type and n-type dopants employed to create the p+and n+ regions, it should be understood to those of ordinary skill inthe art that any suitable doping material may be used. Preferably, dopeddiffusion regions 511 a, 511 b, 511 e, and 511 f have a depth of 2 μm.Preferably, doped diffusion regions 511 c and 511 d have a depth ofapproximately 0.5 μm. In one embodiment, regions 511 a and 511 b aremore deeply diffused compared to regions 511 c and 511 d.

Referring back to FIG. 5, back side n+ regions 508 and 509 are inelectrical communication with metallic area, region, or pad to form aback side cathode 514. Back side region p+ layer 511 e and 511 f are inelectrical communication, preferably at a plurality of points, with ametallic area, region, or pad to form a back side anode 515.

The PN-junctions on both the front side and back side surfaces areelectrically connected from the front junction to the back junction.More specifically, the electrical contacts are brought from the frontside to the back side by means of laser cutting or silicon dry etching aconduit 518 into the photodiode array 500. To serve as an electricalconduit to enable electrical communication between the p+ region 511 eand 511 f and back side anode 515, the inner walls 516 and 517 of theconduit 518 are doped with a suitable conducting material. In oneembodiment, the suitable conductor is a p-type material, such as, butnot limited to boron.

In addition, an oxide layer 519 is deposited on the inner sidewalls ofconduit 518 after it is doped. Polysilicon or polyimide layer 520 isdeposited over the oxide layer 519 and serves as a support layer toincrease the ruggedness of the device.

FIGS. 6 a-6 d are representative front side views of a second embodimentof a photodiode array with double-sided PN-junctions formed inaccordance with the present invention. Referring now to FIGS. 6 a and 6b, diode elements 601 reside within photodiode array 600. In oneembodiment, photodiode array 600 comprises diode elements 601 arrangedin the form of a 8×8 matrix on silicon wafer 602. Although an array of alimited number of diode elements 601 is illustrated in FIG. 6 a, it isunderstood that an array or matrix of diode elements falling within thescope of the present invention may have any number of diode elements. Aperson of ordinary skill would appreciate that the number of photodiodesincorporated in the silicon wafer is not limited to the aforesaid numberand can be adjusted to suit varied operational specifications.

Referring to FIG. 6 a, region 603 demarcates a portion of silicon wafer602, presented in further detail in FIG. 6 b. The followingspecifications are provided to describe an exemplary embodiment of thepresent invention and are not intended to be limiting. Rather, it shouldbe understood by those of ordinary skill in the art that any number ofspecifications are possible to practice the present invention.

For example, but, not limited to such example, FIG. 6 b illustrates thatin one embodiment, pitch length 604 between two adjacent diode elements601 is 2.500 mm, along both the length and width of silicon wafer 602.Within photodiode array 600, active regions or areas 605 of diodeelements 601 serve to provide surfaces onto which light impinges. In oneembodiment, the size of the active area is 2.200 mm².

In one embodiment, photodiode array 600 also possesses the followingcharacteristics: the distance 606 between the center of active area 605and the edge of wafer 602 is 1.285 mm; the gap 607 between a p+ edge ofa diode element 601 and edge of wafer 602 is 0.185 mm; and the gap 608between the n+ edges of any two adjacent diode elements 601 is 0.050 mm.

The interconnections between diode elements 601 are made through backsurface contacts (not shown). In one embodiment, wire interconnectionsare made at the back of photodiode array 600 and are made available forcreating electrical connections with external circuits, such as printedcircuit boards (PCBs) and other devices.

FIG. 6 c is an expanded view of region 609 of photodiode array 600, andis further demarcated with a dotted circle. As shown in FIG. 6 c, in oneembodiment, photodiode array 600 also possesses the followingcharacteristics: the gap 609 between p+ regions of two adjacent diodeelements 601 is 0.300 mm and the gap 610 between two n+ regions of twoadjacent diode elements 601 is 0.050 mm. FIG. 6 d is an expanded view ofDetail A shown in FIG. 6 c and is an exemplary illustration of a conduitfor forming electrical connections from the front side of the device tothe back side of the device. As described above, the conduit has anexemplary diameter of 0.020 mm and is preferably lined with adoped-polysilicon layer.

FIGS. 7 a-7 c are representative back side views of a first embodimentof a photodiode array with double-sided PN-junctions formed inaccordance with the present invention. Referring now to FIG. 7 a, diodeelements 701 reside within photodiode array 700. The preferreddimensional characteristics of photodiode array 700 have already beendescribed with respect to FIGS. 6 a-6 d above and will not be repeatedherein.

Referring now to FIG. 7 b, which is an expanded view of area 703 on FIG.7 a, p+ anode 704 has an exemplary square dimension of 0.500 mm². Inaddition, n+ cathode metal contacts or regions converge from a pluralityof diode elements 701 to form a circular area 705 having a diameter of0.250 mm in one embodiment. In addition, the n+ cathode metal region hasa thickness of 0.0500 mm.

FIG. 7 c is a magnified view of region 706 of FIG. 3 b and is furtherdemarcated by a dotted circle. In one embodiment, the gap 607 betweenthe p+ edges of adjacent diode elements 701 is 0.300 mm. In anotherembodiment, the preferred thickness 708 of the cathode metal betweenadjacent diode elements is 0.050 mm.

The manufacturing process of the second embodiment of the FSL-BSCdouble-sided PN-junction photodiode of the present invention will now bedescribed in greater detail. It should be noted herein that although oneexemplary manufacturing process is described herein, variousmodifications may be made without departing from the scope and spirit ofthe invention.

FIGS. 8 a-8 n depict side planar views of a first embodiment of themanufacturing steps for forming a photodiode array with double-sided PNjunctions formed in accordance with the present invention.

Referring now to FIG. 8 a, the starting material for the photodiodearray of the present invention is device wafer 801. In one embodiment,device wafer 801 is a silicon wafer having the following specifications:a 6-inch diameter; a thickness ranging from 0.210-0.260 mm; n-typeconductivity; and a resistivity on the order of 8000 Ωcm. In anotherembodiment, device wafer 801 is a silicon wafer having the followingspecifications: a 5-inch diameter; a thickness ranging from 0.210-0.260mm; n-type conductivity; and a resistivity on the order of 8000 Ωcm. Theabove specifications are merely for the purposes of illustration, andare not limiting. Consequently these specifications may be modified tosuit the design, fabrication and functional requirements suggestedherein.

Although the present invention is not limited to this embodiment, themanufacturing steps of the present invention will be described withrespect to device wafer 801 possessing the following specifications:n-type silicon wafer having a thickness of 0.230 mm. While it ispreferred that the device wafer be comprised of silicon, one of ordinaryskill in the art would appreciate that any suitable semiconductormaterial, which can be processed in accordance with the processing stepsof the present invention, may be used.

In one embodiment, device wafer 801 is polished on both sides to allowfor greater conformity to parameters, surface flatness, andspecification thickness. It should be understood by those of ordinaryskill in the art, however, that the above specifications are not bindingand that the type of material and wafer size can easily be changed tosuit the design, fabrication, and functional requirements of the presentinvention.

Referring back to FIG. 8 a, in step 820, raw device wafer 801 issubjected to a standard mask oxidation process that grows a mask oxidelayer 802 on both the front side 801 a and back side 801 b of the devicewafer. In one embodiment, the oxidation mask is made of SiO₂ or Si₃N₄and thermal oxidation is employed to achieve mask oxidation. Standardmask oxidation is well known to those of ordinary skill in the art andwill not be described in further detail herein.

As shown in FIG. 8 b, after the standard mask oxidation is complete, thedevice wafer is subjected to n+ photolithography on both the front andback sides 801 a, 801 b of device wafer 801 in step 825.Photolithography includes employing a photoresist layer to etch aspecific pattern on the surface of the wafer. Generally, the photoresistlayer is a photosensitive polymeric material for photolithography andphotoengraving that can form a patterned coating on a surface. Afterselecting a suitable material and creating a suitable photoresistpattern, a thin photoresist layer is applied to both front and backsides 801 a, 801 b of device wafer 801. In one embodiment, thephotoresist layer is applied via a spin coating technique. Spin coatingis well known to those of ordinary skill in the art and will not bedescribed in detail herein.

The device wafer is then subjected to n+ masking. N+ masking is employedto protect portions of device wafer 801. Generally, photographic masksare high precision plates containing microscopic images of preferredpattern or electronic circuits. They are typically fabricated from flatpieces of quartz or glass with a layer of chrome on one side. The maskgeometry is etched in the chrome layer. In one embodiment, the n+ maskcomprises a plurality of diffusion windows with appropriate geometricaland dimensional specifications. The photoresist coated device wafer 801is aligned with the n+ mask. An intense light, such as ultravioletlight, is projected through the mask, exposing the photoresist layer inthe pattern of the n+ mask. The n+ mask allows selective irradiation ofthe photoresist on the device wafer. Regions that are exposed toradiation are hardened while those that are reserved for diffusionremain shielded by the n+ mask and easily removed. The exposed andremaining photoresist is then subjected to a suitable chemical or plasmaetching process to reveal the pattern transfer from the mask to thephotoresist layer. An etching process is then employed to remove thesilicon dioxide layer. In one embodiment, the pattern of the photoresistlayer and/or n+ mask defines a plurality of regions 803 devoid of theoxide layer deposited in step 820 and ready for n+ diffusion.

As shown in FIG. 8 c, in step 830, device wafer 801 is subjected to n+diffusion followed by drive-in oxidation. In step 830, an appropriateamount of a dopant such as, but not limited to phosphorus, is depositedonto the substrate wafer. The device wafer 801 is then subjected to adrive-in oxidation process that is used to redistribute the dopant atomsand deposit them deeper into the wafer. In addition, exposed siliconsurfaces are oxidized.

FIGS. 8 d and 8 e describe steps for forming a conduit that extendsthrough the total thickness of the wafer. As shown in FIG. 8 d, in step835 the back side 801 b of device wafer 801 is subjected to laser holelithography to form an opening 804 in oxide layer 802 of back side 801 bof device wafer 801. As shown in FIG. 8 e, in step 840, holes 805 arecut through the entire device wafer 801 using a suitable hole cuttingmethod.

As known to persons of ordinary skill in the art, methods used to formholes in substrates comprise, but are not limited to, reactive ionetching (RIE), photo patterning, and laser-based techniques, such aslaser ablation, laser micromachining, and laser scribing. Lasers offerconsiderable flexibility and precision focus, thereby making it aneffective means for forming small diameter holes, such as micro-holeshaving diameter of the order of approximately 20 to 30 μm. Preferredapparatuses, methods or systems perform laser-scribing via aYttrium-Aluminum-Garnet (YAG) solid state laser (Q switched or pulsed),for example Neodymium (Nd:YAG) laser, Erbium (Er:YAG) laser or Holmium(Ho:YAG) laser, operating at a suitable wavelength to formmicro-structures, such as trenches, kerfs, or holes. In one preferredembodiment, to form the holes, a Nd:YAG laser having a suitable emittedbeam wavelength and electrical efficiency is used.

In one embodiment, holes 805 are cut through the wafer using laserdrilling, resulting in through hole 805, formed from inner side walls806 of device wafer 801.

It should be noted herein that the reactive ion etching (RIE) and laserhole drilling processes are generally interchangeable. RIE is capable ofachieving very small holes with smooth walls, approximately on the orderof 20 μm in diameter. Laser hole drilling typically results in largerholes, with rough walls. The choice of process involves many factors,including cost, as the RIE process is generally more expensive than thelaser hole drilling process. For the embodiments described herein, theappropriate hole formation method is outlined, and in some cases, arenot limited to design specifications.

Referring now to FIG. 8 f, in step 845, both front side 801 a and backside 801 b of device wafer 801 is subjected to a first p+ lithographyprocess, forming regions 807, devoid of the oxide layer. The p+lithography process has already been described with respect to the firstembodiment above and will not be repeated herein.

In step 850, as shown in FIG. 8 g, regions 807 and sidewalls 806 aresubjected to heavy p+ diffusion followed by drive-in oxidation. In oneembodiment, the p+ diffusion material is boron. Thus, the inner sidewalls 806 formed from laser hole cutting or reactive ion etching intodevice 801 are doped with a suitable p-type dopant.

In FIG. 8 h, a second p+ mask lithography step 855 is performed on thefront side 801 a of device wafer 801, forming regions 808 devoid ofoxide layer. In step 860, shown in FIG. 8 i, a shallow diffusion isperformed, followed by drive-in oxidation. In one embodiment, thediffusion material is boron. Step 860 results in shallow p+ diffusionregions 809.

Referring to FIG. 8 j, in step 865, an anti-reflective (AR) layer isgrown on the front side 801 a and back side 801 b of device wafer 801,as wells as side walls 806, formed in step 840. Thereafter, apolysilicon layer is deposited or polymide layer is spun on using astandard spin coating process in step 870 to fill the plurality of holesformed in step 840 a shown in FIG. 8 k.

In step 875, as shown in FIG. 8 l, front side 801 a and back side 801 bof device wafer 801 is subjected to a standard poly-siliconphotolithography process, as is well known to those of ordinary skill inthe art. Step 875 serves to etch the polysilicon layer from regions ofdevice wafer 801, while retaining the polysilicon in the holes formedfrom sidewalls 806. In one embodiment, undoped polysilicon is employedto give greater strength to the photodiode array.

In step 880, as shown in FIG. 8 m, a contact etch mask is used to etch aplurality of contact windows 810 into the back side 801 b of the devicewafer 801, forming electrical connections to n+ and p+ diffused areas.The contact window is formed on the back side 801 b of the treatedsubstrate wafer by using standard semiconductor technologyphotolithography techniques. The contact window oxide can then beremoved by either standard wet or standard dry etching techniques as arewell known to those of ordinary skill in the art.

Now referring to FIG. 8 n, in step 885, the device wafer 801 issubjected to metal deposition process to etch metal on the back side ofthe wafer for creating electrical connections to n+ and p+ diffusedareas. In the metal deposition process, also called metallization, metallayers 811 are deposited on the wafer to create conductive pathways. Themetal deposition process has already been described with respect to thefirst embodiment manufacturing steps above and will not be repeatedherein.

The above discussion is aimed towards providing several exemplaryembodiments incorporating the novel aspects of the present invention andit should be understood that the foregoing illustration is not the onlyapplication where the present invention can be reduced down to practice.The present invention can be suitably modified to incorporate otherpossible embodiments as well. The scope of the invention is definedsolely by the accompanying claims and within the scope of the claims;the present invention can be employed in various other situations.

1. A photodiode comprising: a substrate with at least a front side and aback side; at least one PN-junction on the front side; at least onePN-junction on the back side; and at least one conduit for forming anelectrical connection from a PN-junction on the front side of thesubstrate to a PN-junction on the back side of the substrate, whereinthe conduit comprises a) a p+ dopant layer and b) a polysilicon orpolyimide filling, wherein said photodiode is manufactured from asilicon wafer having a thickness ranging from 0.210-0.260 mm and n-typeconductivity, wherein said photodiode is divided into a front-sideregion and a back side region, wherein each of said front side regionand said back side region comprise at least two doped diffusion regions,and wherein at least one doped diffusion region has a depth ofapproximately 1 μm.
 2. A photodiode comprising: a substrate with atleast a front side and a back side; at least one PN-junction on thefront side; at least one PN-junction on the back side; and at least oneconduit for forming an electrical connection from a PN-junction on thefront side of the substrate to a PN-junction on the back side of thesubstrate, wherein the conduit comprises a) a p+ dopant layer and b) apolysilicon or polyimide filling, wherein said photodiode ismanufactured from a silicon wafer having a thickness ranging from0.210-0.260 mm and n-type conductivity, wherein said photodiode isdivided into a front-side region and a back side region, wherein each ofsaid front side region and said back side region comprise at least twodoped diffusion regions, and wherein at least one doped diffusionregions has a depth of approximately 0.5 μm.
 3. The photodiode of claim1 wherein at least one of said doped diffusion regions in the back sideregion is in electrical communication with a metallic area to form atleast one back side cathode.
 4. The photodiode of claim 3 wherein aninner edge of said cathode and said conduit are separated by a gap ofapproximately 0.060 mm.
 5. The photodiode of claim 3 wherein said dopeddiffusion region in the back side region in electrical communicationwith a metallic area to form at least one back side cathode is an n-typedoped diffusion region.
 6. The photodiode of claim 1 wherein at leastone of said doped diffusion regions in the back side region is inelectrical communication with a metallic area to form at least one backside anode.
 7. The photodiode of claim 6 wherein said doped diffusionregion in the back side region in electrical communication with ametallic area to form at least one back side anode is an p-type dopeddiffusion region.
 8. A photodiode comprising: a substrate with at leasta front side and a back side; at least one PN-junction on the frontside; at least one PN-junction on the back side; and at least oneconduit for forming an electrical connection from a PN-junction on thefront side of the substrate to a PN-junction on the back side of thesubstrate, wherein the conduit comprises a) a p+ dopant layer and b) apolysilicon or polyimide filling, wherein said photodiode ismanufactured from a silicon wafer having a thickness ranging from0.210-0.260 mm and n-type conductivity, wherein said photodiode isdivided into a front-side region and a back side region, wherein each ofsaid front side region and said back side region comprise at least twodoped diffusion regions, wherein one of said at least two doped regionshas a p-type conductivity and one of said at least two doped regions hasan n-type conductivity, and wherein said p-type conductivity dopedregion and said n-type conductivity doped region are separated by a gapof approximately 0.125 mm.
 9. The photodiode of claim 8 wherein saidconduit has a diameter of approximately 0.020 mm.
 10. A photodiodecomprising: a substrate with at least a front side and a back side; atleast one PN-junction on the front side; at least one PN-junction on theback side; and at least one conduit for forming an electrical connectionfrom a PN-junction on the front side of the substrate to a PN-junctionon the back side of the substrate, wherein the conduit comprises a) a p+dopant layer and b) a polysilicon or polyimide filling, wherein saidphotodiode is manufactured from a silicon wafer having a thicknessranging from 0.210-0.260 mm and n-type conductivity, wherein saidphotodiode is divided into a front-side region and a back side region,wherein each of said front side region and said back side regioncomprise at least two doped diffusion regions, wherein at least one ofsaid doped diffusion regions in the back side region is in electricalcommunication with a metallic area to form at least one back sidecathode, and wherein an inner edge of said cathode and said conduit areseparated by a gap of approximately 0.060 mm.
 11. The photodiode ofclaim 2 wherein at least one of said doped diffusion regions in the backside region is in electrical communication with a metallic area to format least one back side cathode.
 12. The photodiode of claim 11 whereinan inner edge of said cathode and said conduit are separated by a gap ofapproximately 0.060 mm.
 13. The photodiode of claim 11 wherein saiddoped diffusion region in the back side region in electricalcommunication with a metallic area to form at least one back sidecathode is an n-type doped diffusion region.
 14. The photodiode of claim2 wherein at least one of said doped diffusion regions in the back sideregion is in electrical communication with a metallic area to form atleast one back side anode.
 15. The photodiode of claim 14 wherein saiddoped diffusion region in the back side region in electricalcommunication with a metallic area to form at least one back side anodeis an p-type doped diffusion region.